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5LN01M
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=50V, VGS=0V
VGS=±8V, VDS=0V
50
1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
VDS=10V, ID=100 μ A
VDS=10V, ID=50mA
ID=50mA, VGS=4V
0.4
0.13
0.18
6
1.3
7.8
V
S
Ω
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=30mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
See speci ? ed Test Circuit.
VDS=10V, VGS=10V, ID=100mA
IS=100mA, VGS=0V
7.1
10
6.6
4.7
1.7
18
42
190
105
1.57
0.20
0.32
0.85
9.9
20
1.2
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
4V
0V
VIN
VIN
VDD=25V
ID=50mA
RL=500 Ω
PW=10 μ s
D.C. ≤ 1%
D
VOUT
G
5LN01M
P.G
50 Ω
S
No.6137-2/6
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